Research Associate

Description:

The successful candidate will support three new research projects funded by EPSRC and Horizon Europe in designing fast switching power semiconductor modules and electrical circuits using wide bandgap devices (silicon carbide and gallium nitride). This could include models for electronic packaging and circuit (e.g. interconnects such as wirebonds, solder joints and PCB), and for semiconductor devices (e.g. SiC-MOSFET, GaN-HEMT etc.).

Candidates should hold an BEng, MEng or equivalent degree in electrical/electronic, mechanical or materials engineering or a related discipline. Candidates hold or about to obtain a PhD in an appropriate field is highly welcome.

Candidates should also have the ability to work independently within a multidisciplinary research team and have excellent communication and presentation skills.

Technical skills and knowledge in the following areas are essential:
 

• General laboratory practical skills, e.g. use of electronic test equipment for electrical, thermal characterisation of electronic components.
• Knowledge of wide bandgap (SiC/GaN) power semiconductor devices and their characteristics.
• The ability to model power semiconductor devices or simulate power electronics circuits using software (at least one from below: MATLAB/Simulink, LTSpice, PSpice, Saber, TCAD, PLECs….)
• Experience of designing PCB and circuits for semiconductor device test and evaluation